Datasheet4U Logo Datasheet4U.com

Si4362BDY N-Channel MOSFET

Si4362BDY Description

N-Channel 30-V (D-S) MOSFET Si4362BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0046 at VGS = 10 V 0.0054 at VGS = 4.5 V ID (A)a.

Si4362BDY Features

* Halogen-free According to IEC 61249-2-21 Available
* TrenchFET® Power MOSFET
* Optimized for "Low Side" Synchronous Rectifier Operation

Si4362BDY Applications

* DC/DC Converters
* Synchronous Rectifiers D G Top View Ordering Information: Si4362BDY-T1-E3 (Lead-(Pb)-free) Si4362BDY-T1-GE3 (Lead-(Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Volt

📥 Download Datasheet

Preview of Si4362BDY PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • Si4362 - HIGH-PERFORMANCE / LOW-CURRENT RECEIVER (Silicon Laboratories)
  • Si4362-C - HIGH-PERFORMANCE LOW-CURRENT RECEIVER (Silicon Laboratories)
  • SI4362DY - N-Channel MOSFET (Vishay Siliconix)
  • SI4366DY - N-Channel MOSFET (Vishay Siliconix)
  • SI4300 - Dual-Band Monolithic Power Amplifier System (Silicon Laboratories)
  • SI4300T - Tri-Band Monolithic Power Amplifier System (Silicon Laboratories)
  • Si4313-B1 - LOW-COST ISM RECEIVER (Silicon Laboratories)
  • SI4330DY - Dual N-Channel 30-V (D-S) MOSFET (Vishay Siliconix)

📌 All Tags

N-Channel MOSFET Vishay
Vishay Si4362BDY-like datasheet