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SI5855DC P-Channel MOSFET

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Description

Si5855DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.110 at VGS = - 4.5 V - 20 .

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Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFETs
* Ultra Low Vf Schottky
* Si5853DC Pin Compatible

Applications

* Charging Circuit in Portable Devices 1206-8 ChipFET® 1 A KA K D D S G Marking Code JB XXX Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5855DC-T1-E3 (Lead (Pb)-free) Si5855DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S G K D P-Channel MOSFET A A

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