Si5856DC - N-Channel 1.8 V (G-S) MOSFET
Si5856DC Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.040 at VGS = 4.5 V 20 0.045 at VGS = 2.5 V 0.052 at VGS = 1.8 V ID (A) 5.9 5.6 5.2 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.375 V at 1.0 A IF (A) 1.0 1206-8 ChipFET® 1 A KA KS DG D Marking Code JD XXX Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5856DC-T1-E3 (Lead (Pb)-free) Si5856DC-T1-GE3 (Lead (Pb)-f
Si5856DC Features
* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFETs
* Ultra Low RDS(on)
* Ultra Low VF Schottky
* Si5853DC Pin Compatible
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Buck Rectifier Switch, Buck-Boost
