Si5856DC N-Channel 1.8 V (G-S) MOSFET

Vishay

Description

Si5856DC Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.040 at VGS = 4.5 V 20 0.04.

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Datasheet Specifications

Part number: Si5856DC
Manufacturer: Vishay ↗
File Size: 127.08 KB
Datasheet: Si5856DC-Vishay.pdf
Description: N-Channel 1.8 V (G-S) MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFETs
* Ultra Low RDS(on)
* Ultra Low VF Schottky
* Si5853DC Pin Compatible

Applications

* Buck Rectifier Switch, Buck-Boost
* Synchronous Rectifier or Load
* Switch for Portable Devices D K G S N-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Unit Drain-Source Voltage (MOSFET and Schottky)

Si5856DC Distributors

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Si5856DC N-Channel 1.8 G-S MOSFET Vishay

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