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SI6866BDQ Datasheet - Vishay Siliconix

SI6866BDQ Dual N-Channel MOSFET

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the *55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bi.

SI6866BDQ Datasheet (263.75 KB)

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Datasheet Details

Part number:

SI6866BDQ

Manufacturer:

Vishay ↗ Siliconix

File Size:

263.75 KB

Description:

Dual n-channel mosfet.

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SI6866BDQ Dual N-Channel MOSFET Vishay Siliconix

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