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SIHF530 Power MOSFET

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Description

Power MOSFET IRF530, SiHF530 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 26.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF530PbF SiHF530-E3 IRF530 SiHF530 ABSOLUTE MAXIMUM RATINGS (TC

SIHF530 Distributors

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📌 All Tags

SIHF530 Power MOSFET Vishay Siliconix
Vishay Siliconix SIHF530-like datasheet
SIHF530S
SIHF510
SIHF510S
SIHF520
SIHF540