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SiHF18N50C Power MOSFET

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Description

SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration .

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Features

* Low Figure-of-Merit Ron x Qg
* 100 % Avalanche Tested
* High Peak Current Capability
* dV/dt Ruggedness
* Improved trr/Qrr
* Improved Gate Charge
* High Power Dissipations Capability
* Compliant to RoHS Directive 2002/95/EC G S D G

Applications

* unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay pers

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