SIHLZ14 Power MOSFET

Vishay Siliconix

Description

Power MOSFET IRLZ14, SiHLZ14 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 8..
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SIHLZ14
Manufacturer: Vishay ↗ Siliconix
File Size: 1.13 MB
Datasheet: SIHLZ14_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt Rating
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Availab

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRLZ14PbF SiHLZ14-E3 IRLZ14 SiHLZ14 ABSOLUTE MAXIMUM RATINGS (TC

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SIHLZ14 Power MOSFET Vishay Siliconix

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