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TSFF5410 High Speed IR Emitting Diode

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Description

End of Life - Last Available Purchase Date: 11-October-2023 (PTN-OPT-1278-2023-REV-1) www.vishay.com TSFF5410 Vishay Semiconductors High Speed Infr.
TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, unti.

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Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Leads with stand-off
* Peak wavelength: λp = 870 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity: ϕ = ± 22°

Applications

* Infrared video data transmission between camcorder and TV set
* Free air data transmission systems with high modulation frequencies or high data transmission rate requirements PRODUCT SUMMARY COMPONENT TSFF5410 Ie (mW/sr) 70 ϕ (°) ± 22 Note
* Test conditions see table

TSFF5410 Distributors

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TSFF5410 High Speed Emitting Diode Vishay Siliconix
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