VB40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Name: VB40100G
SKU: VB40100G-673332

Vishay Siliconix

The VB40100G by Vishay Siliconix is a Dual High-Voltage Trench MOS Barrier Schottky Rectifier. Below is the official datasheet preview.

Datasheet Details

Part number	VB40100G
Manufacturer	Vishay Siliconix
File Size	189.52 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB40100G_VishaySiliconix.pdf
Additional preview pages of the VB40100G datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance 2 V40100G PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100G PIN 1 PIN 3 PIN 2 2 3 1.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package).
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

📁 VB40100G Similar Datasheet

VB40100G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40150C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40170C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB408 - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB408B - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)

Other Datasheets by Vishay Siliconix

Published: May 3, 2010 |