VB40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

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	Vishay Semiconductors	VB40100G-E3-8W	DIODE ARR SCHOT 100V 20A TO263AB	DigiKey	0	8000 units	$0.9	🛒 Buy Now

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Datasheet Details

Part number:

VB40100G

Manufacturer:

Vishay ↗ Siliconix

File Size:

189.52 KB

Description:

Dual high-voltage trench mos barrier schottky rectifier.
New Product V40100G, VF40100G, VB40100G & VI40100G www.DataSheet4U.com Vishay General Semiconductor.
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TMBS ® T.

✔ VB40100G Features

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Low thermal resistance 2 V40100G PIN 1 PIN 3 PIN 2 CASE 3 1

✔ VB40100G Application

TO-263AB K K TO-262AA 2 1 1 VB40100G PIN 1 PIN 2 K HEATSINK 2 3 For use in high frequency inverters, s

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VB40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

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