• Part: VB40100G-E3
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 145.59 KB
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Vishay
VB40100G-E3
VB40100G-E3 is Dual High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 .vishay. Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V40100G 3 2 1 PIN 1 PIN 2 PIN 3 CASE VF40100G PIN 1 PIN 2 PIN 3 Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Low thermal resistance - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) - Material categorization: For definitions of pliance please...