VB40150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	VB40150C
Manufacturer	Vishay
File Size	153.21 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB40150C Datasheet
Additional preview pages of the VB40150C datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.

📁 Similar Datasheet

VB40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VB40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VB408 - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB408B - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB408FI - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB409 - HIGH VOLTAGE REGULATOR POWER I.C. (STMicroelectronics)
VB409SP - HIGH VOLTAGE REGULATOR POWER I.C. (STMicroelectronics)
VB4610N - Dual P-Channel MOSFET (VBsemi)

Other Datasheets by Vishay

Published: Feb 2, 2012 |