VB40150C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	VB40150C-E3
Manufacturer	Vishay
File Size	201.97 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB40150C-E3 Datasheet
Additional preview pages of the VB40150C-E3 datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA packag.

📁 Similar Datasheet

VB40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VB40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VB408 - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB408B - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB408FI - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB409 - HIGH VOLTAGE REGULATOR POWER I.C. (STMicroelectronics)
VB409SP - HIGH VOLTAGE REGULATOR POWER I.C. (STMicroelectronics)
VB4610N - Dual P-Channel MOSFET (VBsemi)

Other Datasheets by Vishay

Published: Jun 9, 2019 |