Datasheet4U Logo Datasheet4U.com

1N960B - Silicon Z-Diodes

Datasheet Summary

Features

  • D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ.
  • tolerance ± 5%.

📥 Download Datasheet

Datasheet preview – 1N960B

Datasheet Details

Part number 1N960B
Manufacturer Vishay Telefunken
File Size 33.71 KB
Description Silicon Z-Diodes
Datasheet download datasheet 1N960B Datasheet
Additional preview pages of the 1N960B datasheet.

📁 Similar Datasheet

  • 1N960B - METALLURGICALLY BONDED (Compensated Deuices Incorporated)
  • 1N960B - SILICON ZENER DIODE (Central Semiconductor)
  • 1N960B - ZENER DIODES (EIC)
  • 1N960B - Zener Diode (NTE)
  • 1N960B - Zener Diodes (GOOD-ARK)
  • 1N960B - Silicon 500mW Zener Diodes (Microsemi)
  • 1N960B - 500mW SILICON ZENER DIODES (Digitron Semiconductors)
  • 1N960B - Zeners (Fairchild Semiconductor)
  • 1N960B-1 - Silicon Zener Diode (VPT)
  • 1N960B-1 - Silicon Zener Diode Series (MA-COM)
Other Datasheets by Vishay Telefunken

Full PDF Text Transcription

Click to expand full text
1N957B...1N963B Vishay Telefunken Silicon Z–Diodes Features D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions TL 75°C x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 200 –65...+200 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=9.5mm (3/8”), TL=constant Symbol RthJA Value 300 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.1 Unit V Rev. A3, 13-Nov-98 1 (3) 1N957B...
Published: |