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1N958B - Silicon Z-Diodes

1N958B Description

1N957B1N963B Vishay Telefunken Silicon Z *Diodes .

1N958B Features

* D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ

1N958B Applications

* 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z
* current Junction temperature Storage temperature range Test Conditions TL 75°C x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 200
* 65+200 Unit mW mA °C °C Maximum Thermal Resistance Tj

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Silicon Z-Diodes Vishay Telefunken
Vishay Telefunken 1N958B-like datasheet