1N958B Datasheet - Vishay Telefunken

1N958B, Silicon Z-Diodes

1N957B1N963B Vishay Telefunken Silicon Z *Diodes .

Features

* D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ

Applications

* 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z
* current Junction temperature Storage temperature range Test Conditions TL 75°C x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 200
* 65+200 Unit mW mA °C °C Maximum Thermal Resistance Tj

1N958B_VishayTelefunken.pdf