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BA779S - Silicon PIN Diodes

Datasheet Summary

Features

  • D Wide frequency range 10 MHz to 1 GHz.

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Datasheet Details

Part number BA779S
Manufacturer Vishay Telefunken
File Size 54.01 KB
Description Silicon PIN Diodes
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BA779.BA779S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 30 50 125 –55...+125 Unit V mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Differential forward resistance Reverse impedance Minority carrier lifetime Test Conditions IF=20mA VR=30 V f=100MHz, VR=0 f=100MHz, IF=1.
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