1N4150W-V
FEATURES
- Silicon epitaxial planar diode
- For general purpose and switching
- This diode is also available in other case styles including the DO-35 case with the type designation 1N4150, and the Mini MELF case with the type designation LL4150.
- AEC-Q101 qualified
- Material categorization: For definitions of pliance please see .vishay./doc?99912
PARTS TABLE
PART
ORDERING CODE
1N4150W-V-GS18 or 1N4150W-V-GS08
TYPE MARKING A4
INTERNAL CONSTRUCTION
Single diode
REMARKS Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage Maximum average forward rectified current Maximum power dissipation (1)
VRRM IF(AV) Ptot
VALUE 50 200 410
UNIT V m A m W
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Rth JA
Maximum junction temperature
Tj
Storage temperature range
Tstg
Note (1)...
