CPV364M4FPbF

Fast IGBT

Vishay

CPV364M4FPbF Features

* IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE IRMS per phase (4.6 kW total) with TC = 90 °C TJ Supply voltage Power factor 18 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 15 A, 25 °C Package 1.35 V SIP Circuit Three Phase In

CPV364M4FPbF General Description

The IGBT technology is the key to Vishay‘s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This .

CPV364M4FPbF Datasheet (238.58 KB)