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CPV364M4KPbF - Fast IGBT

Datasheet Summary

Description

The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Short circuit rated ultrafast: Optimized for high speed > 5.0 kHz, and short circuit rated to 10 μs at 125 °C, VGE = 15 V RoHS.
  • Fully isolated printed circuit board mount.

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Datasheet preview – CPV364M4KPbF

Datasheet Details

Part number CPV364M4KPbF
Manufacturer Vishay
File Size 235.22 KB
Description Fast IGBT
Datasheet download datasheet CPV364M4KPbF Datasheet
Additional preview pages of the CPV364M4KPbF datasheet.

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Full PDF Text Transcription

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www.vishay.com CPV364M4KPbF Vishay Semiconductors IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE IRMS per phase (3.1 kW total) with TC = 90 °C TJ Supply voltage Power factor 11 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 13 A, 25 °C Package 1.8 V SIP Circuit Three Phase Inverter FEATURES • Short circuit rated ultrafast: Optimized for high speed > 5.
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