G20N50C
FEATURES
- Low figure-of-merit Ron x Qg
- 100 % avalanche tested
- High peak current capability
- dv/dt ruggedness
- Improved Trr/Qrr
- Improved gate charge
Available
- High power dissipations capability
- Material categorization: for definitions of pliance please see .vishay./doc?99912
ORDERING INFORMATION
Package Lead (Pb)-free
TO-247AC Si HG20N50C-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) a Pulsed drain current b
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear derating factor
Single pulse avalanche energy c Maximum power dissipation Reverse diode d V/dt d
EAS PD d V/dt
Operating junction and storage temperature range Soldering remendations (peak temperature) d
For 10 s
TJ, Tstg
Notes a. Limited by maximum junction temperature b. Repetitive rating; pulse width limited by maximum junction temperature c. VDD = 50 V, starting TJ = 25...
