G20N50C Datasheet | Vishay

FEATURES - Low figure-of-merit Ron x Qg - 100 % avalanche tested - High peak current capability - dv/dt ruggedness - Improved Trr/Qrr - Improved gate charge Available - High power dissipations capability - Material categorization: for definitions of pliance please see .vishay./doc?99912 ORDERING INFORMATION Package Lead (Pb)-free TO-247AC Si HG20N50C-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) a Pulsed drain current b VGS at 10 V TC = 25 °C TC = 100 °C Linear derating factor Single pulse avalanche energy c Maximum power dissipation Reverse diode d V/dt d EAS PD d V/dt Operating junction and storage temperature range Soldering remendations (peak temperature) d For 10 s TJ, Tstg Notes a. Limited by maximum junction temperature b. Repetitive rating; pulse width limited by maximum junction temperature c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 m H, Rg = 25 Ω, IAS = 17 A d. ISD ≤ 18 A, di/dt ≤ 380 A/μs, VDD ≤ VDS, TJ ≤ 150 °C e. 1.6 mm from case LIMIT 500 ± 30 20 11 80 1.8 361 250 5 -55 to +150 300 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Maximum junction-to-case (drain) Rth JA Rth...