Full PDF Text Transcription for G20N50C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
G20N50C. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com SiHG20N50C Vishay Siliconix Power MOSFET D TO-247 S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg max. (nC) Qgs (nC) 560 VGS =...
View more extracted text
SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg max. (nC) Qgs (nC) 560 VGS = 10 V 76 21 Qgd (nC) Configuration 34 Single 0.270 FEATURES • Low figure-of-merit Ron x Qg • 100 % avalanche tested • High peak current capability • dv/dt ruggedness • Improved Trr/Qrr • Improved gate charge Available • High power dissipations capability • Material categorization: for definitions of compliance please see www.vishay.