IRFIBC30G Power MOSFET

Vishay

Description

www.vishay.com IRFIBC30G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 600 VG.
Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resista.

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Datasheet Specifications

Part number: IRFIBC30G
Manufacturer: Vishay ↗
File Size: 273.26 KB
Datasheet: IRFIBC30G-Vishay.pdf
Description: Power MOSFET

Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* Dynamic dV/dt rating
* Low thermal resistance
* Material categorization: for definitions of compliance please see www. vishay. com/d

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

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IRFIBC30G Power MOSFET Vishay

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