IRFZ48 Datasheet - Vishay

IRFZ48, Power MOSFET

www.vishay.com IRFZ48 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 VGS = 10 V Q.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

Features

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Ultra low on-resistance Available
* Very low thermal resistance
* 175 °C operating temperature
* Fast switching
* Ease of paralleling
* Material categorization: fo

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free TO-220AB IRFZ48PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted

IRFZ48-Vishay.pdf