IRFZ48N Datasheet - NXP

IRFZ48N, N-Channel MOSFET

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.

Applications

* IRFZ48N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 64 140 175 16 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DES

IRFZ48N_PhilipsSemiconductors.pdf