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IRFZ48N - N-Channel MOSFET

Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.

Features

  • very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching.

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Datasheet Details

Part number IRFZ48N
Manufacturer NXP
File Size 65.22 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFZ48N Datasheet
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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ48N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
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