IRF530N Datasheet | NXP Semiconductors

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Features - ’Trench’ technology - Low on-state resistance - Fast switching - Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) ≤ 110 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- d.c. to d.c. converters - switched mode power supplies The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 1 2 3 gate source drain LIMITING VALUES Limiting values in accordance...