Description
The K814P, K824P, K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4 pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package.
Features
- Endstackable to 2.54 mm (0.1") spacing.
- DC isolation test voltage VISO = 5000 VRMS.
- Low coupling capacitance of typical 0.3 pF.
- Current transfer ratio (CTR) of typical 100 %.
- Low temperature coefficient of CTR.
- Wide ambient temperature range.
- Material categorization: for definitions of compliance
please see www. vishay. com/doc?99912.
K814P Datasheet
