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SI1013CX - MOSFET

SI1013CX Description

www.vishay.com Si1013CX Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.760 at VGS = -4.5 V -20 1.040 at VGS.

SI1013CX Features

* TrenchFET® power MOSFET
* 100 % Rg tested
* Typical ESD protection: 1000 V (HBM)
* Fast switching speed

SI1013CX Applications

* Load / power switch for portable devices
* Drivers: relays, solenoids, displays
* Battery operated systems G S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Conti

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