SI1013CX Datasheet, Mosfet, Vishay

SI1013CX Features

• Mosfet
• TrenchFET® power MOSFET
• 100 % Rg tested
• Typical ESD protection: 1000 V (HBM)
• Fast switching speed
• Material categorization: for definiti

PDF File Details

Part number:

SI1013CX

Manufacturer:

Vishay ↗

File Size:

187.00kb

Download:

📄 Datasheet

Description:

Mosfet.

SI1013CX Application

• Applications
• Load / power switch for portable devices
• Drivers: relays, solenoids, displays
• Battery operated systems G

TAGS

SI1013CX

Vishay

📁 Related Datasheet

SI1013 - Ultra Low Power ADC (Silicon Laboratories)
Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operati.

SI1013R - P-Channel MOSFET (Vishay Siliconix)
P-Channel 1.8 V (G-S) MOSFET Si1013R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 1.2 at VGS = - 4.5 V - 20 1.6 at VGS = - 2.5 V 2.7 .

SI1013X - P-Channel MOSFET (Vishay Siliconix)
P-Channel 1.8 V (G-S) MOSFET Si1013R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 1.2 at VGS = - 4.5 V - 20 1.6 at VGS = - 2.5 V 2.7 .

SI1010 - Ultra Low Power 10-Bit ADC (Silicon Laboratories)
Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operati.

SI1011 - Ultra Low Power ADC (Silicon Laboratories)
Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operati.

SI1012 - N-Channel Transistor (MCC)
MCC R Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % # .

SI1012 - Ultra Low Power ADC (Silicon Laboratories)
Si1010/1/2/3/4/5 Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operati.

SI1012CR - N-Channel MOSFET (Vishay Siliconix)
N-Channel 20 V (D-S) MOSFET Si1012CR Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 0.456 at VGS = 2.5 V 20 0.546 at .

SI1012R - N-Channel MOSFET (Vishay Siliconix)
Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.2.

Si1012X - N-Channel MOSFET (Vishay Siliconix)
Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.2.