SIHL630 Power MOSFET

Vishay

Description

IRL630, SiHL630 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 40 5.5 24 .
G S G D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized de.

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Datasheet Specifications

Part number: SIHL630
Manufacturer: Vishay ↗
File Size: 1.90 MB
Datasheet: SIHL630_Vishay.pdf
Description: Power MOSFET

Features

* 200 V 0.40
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Logic Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* 150 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Lead (Pb)-free Available Available

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRL630PbF SiHL630-E3 IRL630 SiHL630 ABSOLUTE MAXIMUM RATINGS TC = 25 °

SIHL630 Distributors

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SIHL630 Power MOSFET Vishay

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