SIS444DN

N-Channel MOSFET

Vishay

* PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. 0.0033 at VGS = 10 V 0.0043 at VGS = 4.5 V ID (A)f 35 g Qg (Typ.) 33.5 nC 35g

* Halogen-free According to IEC 61249-2-21 Definition

* TrenchFET® Power MOSFET

* 100 % Rg and UIS Tested

* Compliant to RoHS Directive 2002/95

SIS444DN

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N-channel mosfet.

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SIS444DN N-Channel MOSFET Vishay

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