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SIS472ADN N-Channel MOSFET

SIS472ADN Description

N-Channel 30 V (D-S) MOSFET SiS472ADN Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max.0.0085 at VGS = 10 V 0.0105 at VGS = 4.5 V ID .

SIS472ADN Features

* TrenchFET® Power MOSFET
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg and UIS Tested
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 3.30 mm S 1S 3.30 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View

SIS472ADN Applications

* Notebook CPU Core - High-Side Switch ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avala

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N-Channel MOSFET Vishay
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