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SIS822DNT N-Channel MOSFET

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Description

www.vishay.com SiS822DNT Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX.0.024 at VGS = 10 V 0.030 at VG.

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Features

* TrenchFET® power MOSFET
* 100 % Rg and UIS tested
* Thin 0.8 mm profile

Applications

* Notebook PC - System power - Load switch
* Synchronous buck high-side G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C)

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