SIS890DN N-Channel MOSFET

Vishay

Description

N-Channel 100 V (D-S) MOSFET SiS890DN Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) 0.0235 at VGS = 10 V 0.0245 at VGS = 7.5 V 0.

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Datasheet Specifications

Part number: SIS890DN
Manufacturer: Vishay ↗
File Size: 485.24 KB
Datasheet: SIS890DN-Vishay.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested
* Capable of Operating with 5 V Gate Drive

Applications

* Telecom Bricks
* Primary side switch
* Synchronous Rectification
* Industrial D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Dra

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📁 Related Datasheet

SIS85 SIS85-100 SIS85-101 SIS85-102 SIS85-150 SIS85-151

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SIS890DN N-Channel MOSFET Vishay

Vishay SIS890DN-like datasheet