Si7111EDN Datasheet - Vishay

Si7111EDN P-Channel 30 V (D-S) MOSFET

Si7111EDN Features

* TrenchFET® Gen III p-channel power MOSFET

* RDS(on) rating at VGS = -2.5 V

* 100 % Rg and UIS tested

* Typical ESD protection: 4600 V HBM

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS

* Ba

Datasheet Details

Si7111EDN

143.87 KB

P-channel 30 v (d-s) mosfet.

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Si7111EDN Si7111EDN P-Channel D-S MOSFET Vishay

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