* TrenchFET® Gen IV power MOSFET
* Very low Qg and Qoss reduce power loss and improve efficiency
* Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance plea
Si7116BDN Datasheet (198.14 KB)
Si7116BDN
198.14 KB
N-channel mosfet.
www.vishay.com
Si7116BDN
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
3.3 mm
PowerPAK® 1212-8PT
D
D
D 6
D 7
8
5
0.75 mm
1 3.3 mm Top View
P.
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