Si7386DP Datasheet - Vishay

Si7386DP, N-Channel Reduced N-Channel Reduced

Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.007 at VGS = 10 V 0.0095 at VGS = 4.

Features

* Halogen-free available
* TrenchFET® Gen II Power MOSFET
* PWM Optimized for High Efficiency
* New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

Applications

* DC/DC Conversion for PC D RoHS COMPLIANT G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C

Si7386DP-Vishay.pdf