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SiA907EDJT-T1-GE3

Dual P-Channel 20 V (D-S) MOSFET

SiA907EDJT-T1-GE3 Features

* TrenchFET® power MOSFET

* Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance

* Typical ESD protection: 1500 V HBM

* High speed switching

* Material categorization: For definitions of compliance please see www.vishay.co

SiA907EDJT-T1-GE3 Datasheet (249.56 KB)

Preview of SiA907EDJT-T1-GE3 PDF

Datasheet Details

Part number:

SiA907EDJT-T1-GE3

Manufacturer:

Vishay ↗

File Size:

249.56 KB

Description:

Dual p-channel 20 v (d-s) mosfet.
SiA907EDJT www.vishay.com Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.057 at VGS = -4.5 V 0.095 at V.

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SiA907EDJT-T1-GE3 Dual P-Channel D-S MOSFET Vishay

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