SiA907EDJT-T1-GE3, SiA907EDJT Dual P-Channel 20 V (D-S) MOSFET

Vishay

Description

SiA907EDJT www.vishay.com Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.057 at VGS = -4.5 V 0.095 at V.

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SiA907EDJT-T1-GE3 Datasheet Preview — This datasheet PDF includes multiple part numbers: SiA907EDJT-T1-GE3, SiA907EDJT. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: SiA907EDJT-T1-GE3, SiA907EDJT
Manufacturer: Vishay ↗
File Size: 249.56 KB
Datasheet: SiA907EDJT-Vishay.pdf
Description: Dual P-Channel 20 V (D-S) MOSFET
Note: This datasheet PDF includes multiple part numbers: SiA907EDJT-T1-GE3, SiA907EDJT.
Please refer to the document for exact specifications by model.

Features

* TrenchFET® power MOSFET
* Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance
* Typical ESD protection: 1500 V HBM
* High speed switching
* Material categorization: For definitions of compliance please see www. vishay. co

Applications

* 1 S1
* Charger Switch, Load Switch for Portable Devices
* Battery Management S1 S2 Marking Code: DM Ordering Information: SiA907EDJT-T1-GE3 (Lead (Pb)-free and Halogen-free) SiA907EDJT-T4-GE3 (Lead (Pb)-free and Halogen-free) G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless othe

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SiA907EDJT Dual P-Channel D-S MOSFET Vishay

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