SiA907EDJT-T1-GE3 Features
* TrenchFET® power MOSFET
* Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance
* Typical ESD protection: 1500 V HBM
* High speed switching
* Material categorization: For definitions of compliance please see www.vishay.co
Datasheet Details
SiA907EDJT-T1-GE3, SiA907EDJT
249.56 KB
Dual p-channel 20 v (d-s) mosfet.
This datasheet PDF includes multiple part numbers: SiA907EDJT-T1-GE3, SiA907EDJT.
Please refer to the document for exact specifications by model.
SiA907EDJT-T1-GE3 Distributor
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