SiA907EDJT-T4-GE3 Datasheet - Vishay

SiA907EDJT-T4-GE3 Dual P-Channel 20 V (D-S) MOSFET

SiA907EDJT-T4-GE3 Features

* TrenchFET® power MOSFET

* Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance

* Typical ESD protection: 1500 V HBM

* High speed switching

* Material categorization: For definitions of compliance please see www.vishay.co

Datasheet Details

SiA907EDJT-T4-GE3

249.56 KB

Dual p-channel 20 v (d-s) mosfet.

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