* TrenchFET® power MOSFET
* Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance
* Typical ESD protection: 1500 V HBM
* High speed switching
* Material categorization: For definitions of compliance please see www.vishay.co
SiA907EDJT-T4-GE3 Datasheet (249.56 KB)
SiA907EDJT-T4-GE3
249.56 KB
Dual p-channel 20 v (d-s) mosfet.
SiA907EDJT
www.vishay.com
Vishay Siliconix
Dual P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -20 RDS(on) (Ω) 0.057 at VGS = -4.5 V 0.095 at V.
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