SiEH4800EW Datasheet - Vishay

SiEH4800EW N-Channel MOSFET

SiEH4800EW Features

* TrenchFET® Gen IV power MOSFET

* Wettable flanks enhances solderability

* Fully lead (Pb)-free device

* Very low RDS x Qg figure of merit (FOM)

* 50 % smaller footprint than D2PAK (TO-263)

* 100 % Rg and UIS tested

* Material categorization:

Datasheet Details

SiEH4800EW

267.59 KB

N-channel mosfet.

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SiEH4800EW N-Channel MOSFET Vishay

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