* TrenchFET® Gen IV power MOSFET
* Wettable flanks enhances solderability
* Fully lead (Pb)-free device
* Very low RDS x Qg figure of merit (FOM)
* 50 % smaller footprint than D2PAK (TO-263)
* 100 % Rg and UIS tested
* Material categorization:
SiEH4800EW Datasheet (267.59 KB)
SiEH4800EW
267.59 KB
N-channel mosfet.
www.vishay.com
SiEH4800EW
Vishay Siliconix
N-Channel 80 V (D-S) 175 °C MOSFET
PowerPAK® 8 x 8 BWL
Top View
PRODUCT SUMMARY
VDS (V) RDS(on) max. (.
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