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SiEH4800EW N-Channel MOSFET

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Description

www.vishay.com SiEH4800EW Vishay Siliconix N-Channel 80 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8 BWL Top View PRODUCT SUMMARY VDS (V) RDS(on) max.(.

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Features

* TrenchFET® Gen IV power MOSFET
* Wettable flanks enhances solderability
* Fully lead (Pb)-free device
* Very low RDS x Qg figure of merit (FOM)
* 50 % smaller footprint than D2PAK (TO-263)
* 100 % Rg and UIS tested
* Material categorization:

Applications

* D
* Synchronous rectification
* OR-ing
* Motor drive control G
* Battery management N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK® 8 x 8 BWL SiEH4800EW-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise n

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