Description
IRFZ46, SiHFZ46 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 66 21 25 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
Features
* Dynamic dV/dt Rating
50 0.024
* 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS
Applications
* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220
G
S G D S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRFZ46PbF SiHFZ46-E3 IRFZ46 SiHFZ4