SIHFZ10 Power MOSFET

Vishay Siliconix

Description

Power MOSFET IRFZ10, SiHFZ10 Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration .
Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resista.

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Datasheet Specifications

Part number: SIHFZ10
Manufacturer: Vishay ↗ Siliconix
File Size: 704.50 KB
Datasheet: SIHFZ10_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt Rating
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBO

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SIHFZ10 Power MOSFET Vishay Siliconix

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