Description
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- Advanced process technology.
- Surface mount.
- Low-profile through-hole (IRFZ34L, SiHFZ34L).
- 175 °C operating temperature
Available.
- Fast switching.
- Material categorization: for definitions of
compliance
please
see
www. vishay. com/doc?99912
Available
Note.
- This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not R.
SIHFZ34L_VishaySiliconix.pdf
