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SiHFZ24 Power MOSFET

SiHFZ24 Description

Power MOSFET IRFZ24, SiHFZ24 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

SiHFZ24 Features

* Dynamic dV/dt Rating
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements

SiHFZ24 Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFZ24PbF SiHFZ24-E3 IRFZ24 SiHFZ24 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL

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Power MOSFET Vishay
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