SiZ980BDT - Dual N-Channel MOSFET
SiZ980BDT Features
* TrenchFET® Gen IV power MOSFET
* SkyFET® low side MOSFET with integrated Schottky
* Very low RDS x Qg FOM improves efficiency
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
