SiZ980DT Datasheet - Vishay

SiZ980DT Dual N-Channel MOSFET

www.vishay.com SiZ980DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) () (MAX.) 0.0067 at VGS = 10 V 0.0100 at VGS = 4.5 V 0.0016 at VGS = 10 V 0.0022 at VGS = 4.5 V ID (A) 20 a 20 a 60 a 60 a Qg (TYP.) 5.4 nC 21 nC PowerPAIR® 6 x 5 G2 S2 S2 S2 6 7 8 5 S1/D2 (Pin 9) 6 mm 1 5 mm Top View D1 1 4 D1 3 D1 2 D1 G1 Bottom View Ordering Information: SiZ980DT-T1-GE3 (lead (Pb)-free and halogen-free.

SiZ980DT Features

* TrenchFET® Gen IV power MOSFET

* SkyFET® low-side MOSFET with integrated Schottky

* 100 % Rg and UIS tested

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS

* CPU core power

* Computer / ser

SiZ980DT-Vishay.pdf