SIZ900DT Description
New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) () Channel-1 0.0072 at VGS = 10 V 30 0.0092 at VGS = 4.5 V Channel-2 0.0039 at VGS = 10 V 30 0.0047 at VGS = 4.5 V ID (A) 24a 24a 28a 28a Qg (Typ.) 13.5.
SIZ900DT Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFETs
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC