Full PDF Text Transcription for SIZ916DT (Reference)
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www.vishay.com SiZ916DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) () (MAX.) 0.00640 at VGS = 10 V 0.01...
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Channel-2 VDS (V) 30 30 RDS(on) () (MAX.) 0.00640 at VGS = 10 V 0.01000 at VGS = 4.5 V 0.00130 at VGS = 10 V 0.00175 at VGS = 4.5 V ID (A) g 16 a 16 a 40 a 40 a Qg (TYP.) 7.2 nC 45 nC PowerPAIR® 6 x 5 G2 S2 S2 S2 6 7 8 5 S1/D2 (Pin 9) 6 mm 1 5 mm Top View D1 1 4 D1 3 D1 2 D1 G1 Bottom View Ordering Information: SiZ916DT-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.