SIZ910DT Description
SiZ910DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) Channel-1 0.0058 at VGS = 10 V 30 0.0075 at VGS = 4.5 V Channel-2 30 0.0030 at VGS = 10 V 0.0035 at VGS = 4.5 V ID (A) 40a 40a 40a 40a Qg (Typ.) 12.5 nC 29.
SIZ910DT Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFETs
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC