SiZ980BDT Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ.
SiZ980BDT Key Features
- TrenchFET® Gen IV power MOSFET
- SkyFET® low side MOSFET with integrated Schottky
- Very low RDS x Qg FOM improves efficiency
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance