V10K60DU Datasheet - Vishay

datasheet Preview Page 1 from Datasheet4u.com

V10K60DU Trench MOS Barrier Schottky Rectifier

www.vishay.com V10K60DU Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V .

V10K60DU-Vishay.pdf

V10K60DU Datasheet Preview — Preview of V10K60DU PDF

Datasheet Details

Part number:

V10K60DU

Manufacturer:

Vishay ↗

File Size:

131.02 KB

Description:

Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qualified available - Automotive ordering code: base P/NHM3

Applications

* For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. Models Available PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM IFSM VF at IF = 5 A (TA = 125 °C) 60 V 100 A 0.48 V TJ max. 150 °C Package FlatPAK 5 x 6 Circuit configuration Sepa

V10K60DU Distributors

📁 Related Datasheet

V10K60-5 V10K625-5 V10K680-5 V10K11-5 V10K115-5 V10K130-5

📌 All Tags

V10K60DU Trench MOS Barrier Schottky Rectifier Vishay

Vishay V10K60DU-like datasheet