V10D100CHM3 Datasheet - Vishay

V10D100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V10D100CHM3 Features

* Trench MOS Schottky technology generation 2

* Very low profile - typical height of 1.7 mm

* Ideal for automated placement

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of

Datasheet Details

V10D100CHM3

92.97 KB

Dual high-voltage trench mos barrier schottky rectifier.

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