V10D170C Datasheet - Vishay

V10D170C, Trench MOS Barrier Schottky Rectifier

www.vishay.com V10D170C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series K 1 2 Top View

Features

* Very low profile - typical height of 1.7 mm Available
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qualified available
* Material categorizati

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 5.0 A 170 V 100 A VF at IF = 5.0 A (TA = 125 °C) 0.67 V TJ max.
Package 175 °C SMPD (TO-263AC) Circuit configu

V10D170C-Vishay.pdf