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V10P45S-M3 Datasheet - Vishay

V10P45S-M3 Trench MOS Barrier Schottky Rectifier

V10P45S-M3 Features

* Very low profile - typical height of 1.1 mm

* Ideal for automated placement

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

V10P45S-M3 Datasheet (94.79 KB)

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Datasheet Details

Part number:

V10P45S-M3

Manufacturer:

Vishay ↗

File Size:

94.79 KB

Description:

Trench mos barrier schottky rectifier.

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V10P45S-M3 Trench MOS Barrier Schottky Rectifier Vishay

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