V10P45S-M3 Datasheet - Vishay

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V10P45S-M3 Trench MOS Barrier Schottky Rectifier

www.vishay.com V10P45S-M3 Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Lo.

V10P45S-M3-Vishay.pdf

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Datasheet Details

Part number:

V10P45S-M3

Manufacturer:

Vishay ↗

File Size:

94.79 KB

Description:

Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated

V10P45S-M3 Distributors

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V10P45S-M3 Trench MOS Barrier Schottky Rectifier Vishay

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